Novel vertical - cavity surface - emitting lasers
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چکیده
are maintained. If the etching depth is equal to an integral number of half-wavelengths, uniformly high reflectivity across the active L. Fan, M.C. Wu, H.C. Lee and P. Grodzinski . mesa is achieved. The top electrodes which simultaneously pump the phase-shifted and non-phase-shifted region are then deposited by evaporation and lift-off processes. Fig. 2 shows the scanning electron micrograph (SEM) of the finished device with a mesa size Indexing terms: Vertical cavity surface emitting lasers, Integrated optics, Phase shijters
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